Feb 3, 2009

PhD: Theory of Next Generation Epitaxial Quantum Dot Materials and Devices

Semiconductor quantum dots give atom-like energy levels in a semiconductor material. This project aims to investigate the electronic structure of QDs, its consequences for gain and loss mechanisms in devices, and approaches to the design of devices which will optimize the device gain, while also suppressing the intrinsic loss mechanisms. It is part of a combined experimental and theoretical investigation of QD materials development. We seek to expand the wavelength range accessible to QDs into the mid-infrared, to investigate the control of carrier dynamics and loss processess by careful dot design, and to study the unexplored physical properties of dot within dot systems. The student s work will focus on theoretical analysis of the electronic band structure of these materials and its consequences for gain and loss mechanisms. The work will also involve close collaboration with experimental colleagues investigating the gain and loss mechanisms, and relaxation on an ultra-fast timescale in near and mid-infrared QD devices.

Informal enquiries concerning this studentship can be made to: Professor Eoin O'Reilly (tel. +353 (0)21 490 4413; email eoin.oreilly@tyndall.ie)

To apply, please forward a detailed CV with grades and references to careers@tyndall.ie,quoting the reference number.


To apply for this post, complete the application form and forward with a detailed curriculum vitae and references to:
HR Department
Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland
Fax: +353-21-4904058



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